Magnetic properties of Mn doped crystalline and amorphous Ge thin films grown on Si (111)

Gunduz Aykac İ. , Onel A. C. , Toydemir Yasasun B., Colakerol Arslan L.

TURKISH JOURNAL OF PHYSICS, cilt.44, ss.67-76, 2020 (ESCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 44 Konu: 1
  • Basım Tarihi: 2020
  • Doi Numarası: 10.3906/fiz-1909-17
  • Dergi Adı: TURKISH JOURNAL OF PHYSICS
  • Sayfa Sayıları: ss.67-76

Özet

We investigated the effects of crystalline order on the structural and magnetic properties of ultrathin Mn-doped Ge thin films grown by thermal diffusion. The dopant motion which occurs during the annealing stage appears to differ considerably depending upon whether the Ge layer is in a crystalline or an amorphous state. The details of the temperature-dependent magnetization curves reveal that the a-MnGe and c-MnGe films show ferromagnetic property up to 300K and similar to 250K, respectively. Ferromagnetic Mn5Ge3 thin film with weakly anisotropic in-plane magnetization is formed on amorphous Ge thin film, while weakly ferromagnetic Mn5Gex Si3-x nanostructures are developed on crystalline Ge thin film due to diffusion of Mn atoms through the Ge layer and interact with Si substrate.