Magnetic properties of Mn doped crystalline and amorphous Ge thin films grown on Si (111)

Gunduz Aykac İ., Onel A. C. , Toydemir Yasasun B., Colakerol Arslan L.

TURKISH JOURNAL OF PHYSICS, vol.44, no.1, pp.67-76, 2020 (Peer-Reviewed Journal) identifier identifier

  • Publication Type: Article / Article
  • Volume: 44 Issue: 1
  • Publication Date: 2020
  • Doi Number: 10.3906/fiz-1909-17
  • Journal Name: TURKISH JOURNAL OF PHYSICS
  • Journal Indexes: Emerging Sources Citation Index, Scopus, Academic Search Premier, Compendex, INSPEC, TR DİZİN (ULAKBİM)
  • Page Numbers: pp.67-76

Abstract

We investigated the effects of crystalline order on the structural and magnetic properties of ultrathin Mn-doped Ge thin films grown by thermal diffusion. The dopant motion which occurs during the annealing stage appears to differ considerably depending upon whether the Ge layer is in a crystalline or an amorphous state. The details of the temperature-dependent magnetization curves reveal that the a-MnGe and c-MnGe films show ferromagnetic property up to 300K and similar to 250K, respectively. Ferromagnetic Mn5Ge3 thin film with weakly anisotropic in-plane magnetization is formed on amorphous Ge thin film, while weakly ferromagnetic Mn5Gex Si3-x nanostructures are developed on crystalline Ge thin film due to diffusion of Mn atoms through the Ge layer and interact with Si substrate.