Gamma irradiation-induced changes at the electrical characteristics of organic-based Schottky structures

Güllü Ö., Çankaya M., Biber M., TÜRÜT A.

JOURNAL OF PHYSICS D-APPLIED PHYSICS, vol.41, no.13, 2008 (Peer-Reviewed Journal) identifier

  • Publication Type: Article / Article
  • Volume: 41 Issue: 13
  • Publication Date: 2008
  • Doi Number: 10.1088/0022-3727/41/13/135103
  • Journal Name: JOURNAL OF PHYSICS D-APPLIED PHYSICS
  • Journal Indexes: Science Citation Index Expanded, Scopus

Abstract

We have studied electrical parameters of an Al/methyl violet/p-Si Schottky device by using current-voltage and capacitance-voltage-frequency measurements under gamma irradiation at room temperature. Experimental results have shown that gamma radiation gives rise to an increase in the barrier height, the ideality factor and the interfacial state density, while the series resistance decreases by applied radiation.