Prediction of lateral barrier height in identically prepared Ni/n-type GaAs Schottky barrier diodes


Doğan H., Korkut H., Yıldırım N., TÜRÜT A.

APPLIED SURFACE SCIENCE, cilt.253, ss.7467-7470, 2007 (SCI İndekslerine Giren Dergi)

  • Cilt numarası: 253 Konu: 18
  • Basım Tarihi: 2007
  • Doi Numarası: 10.1016/j.apsusc.2007.03.029
  • Dergi Adı: APPLIED SURFACE SCIENCE
  • Sayfa Sayısı: ss.7467-7470

Özet

We have identically prepared Ni/n-GaAs/In Schottky barrier diodes (SBDs) with doping density of 7.3 x 10(15) cm(-3). The barrier height for the Ni/n-GaAs/In SBDs from the current-voltage characteristics have varied from 0.835 to 0.856 eV, and ideality factor n from 1.02 to 1.08. We have determined a lateral homogeneous barrier height value of 0.862 eV for the Ni/n-GaAs/In SBD from the experimental linear relationship between barrier heights and ideality factors. (c) 2007 Elsevier B.V. All rights reserved.