Temperature dependent negative capacitance behavior of Al/rhodamine-101/n-GaAs Schottky barrier diodes and Rs effects on the C-V and (G/ω)-V characteristics | AVESİS

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Temperature dependent negative capacitance behavior of Al/rhodamine-101/n-GaAs Schottky barrier diodes and Rs effects on the C-V and (G/ω)-V characteristics

Vural Ö. F. , Şafak Y., TÜRÜT A. , Altındal Ş.

Journal of Alloys and Compounds, vol.513, 2012 (Journal Indexed in SCI)

Publication Type: Article / Article
Volume: 513
Publication Date: 2012
Title of Journal : Journal of Alloys and Compounds