Temperature dependent negative capacitance behavior of Al/rhodamine-101/n-GaAs Schottky barrier diodes and Rs effects on the C-V and (G/ω)-V characteristics | AVESİS

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Temperature dependent negative capacitance behavior of Al/rhodamine-101/n-GaAs Schottky barrier diodes and Rs effects on the C-V and (G/ω)-V characteristics

Vural Ö. F. , Şafak Y., TÜRÜT A. , Altındal Ş.

Journal of Alloys and Compounds, cilt.513, 2012 (SCI İndekslerine Giren Dergi)

Cilt numarası: 513
Basım Tarihi: 2012
Dergi Adı: Journal of Alloys and Compounds