The organic compound Rhodamine-101 (Rh101) film on an n-type GaAs substrate with carrier concentration of 7.3 x 10(15) cm(-3) has been formed by means of the evaporation process, and thus Al/Rh101/n-GaAs and Cu/Rh101/n-GaAs contacts have been fabricated. Our aim is to realize a modification of Schottky barrier height (SBH) of the devices using a thin non- polymeric organic compound layer. The Al/Rh101/n-GaAs and Cu/Rh101/n- GaAs contacts have behaved like rectifying contact with the SBH values of 0.68eV and 0.72eV, and with ideality factor values of 2.61 and 2.60 obtained from their forward bias current-voltage (I-V) characteristics at the room temperature, respectively. It has seen that the SBH values obtained for these devices are significantly different from those obtained for the conventional Al/h-GaAs or Cu/n-GaAs Schottky diodes. Furthermore, it has been demonstrated that the trapped-charge-limited current is the dominant transport mechanism at large forward bias voltage. (C) 2007 Elsevier B.V. All rights reserved.