Capacitance-conductance-frequency characteristics of Au/Ni/n-GaN/undoped GaN Structures


Dogan H., Yildirim N., Orak I., Elagoz S., TÜRÜT A.

PHYSICA B-CONDENSED MATTER, vol.457, pp.48-53, 2015 (Peer-Reviewed Journal) identifier

  • Publication Type: Article / Article
  • Volume: 457
  • Publication Date: 2015
  • Doi Number: 10.1016/j.physb.2014.00.033
  • Journal Name: PHYSICA B-CONDENSED MATTER
  • Journal Indexes: Science Citation Index Expanded, Scopus
  • Page Numbers: pp.48-53
  • Keywords: GaN semiconductor, Metal-semiconductor contacts interface states, Frequency-dependent capacitance, Frequency-dependent conductance characteristics, Schottky barrier diode, CURRENT-VOLTAGE CHARACTERISTICS, SERIES RESISTANCE, SCHOTTKY CONTACTS, INTERFACE STATES, TEMPERATURE-DEPENDENCE, ENERGY-DISTRIBUTION, BARRIER HEIGHT, I-V, ADMITTANCE, DIODES

Abstract

Frequency-dependent capacitance (C) and conductance (C) characteristics of the Au/Ni/n-GaN/undoped GaN device have been investigated in the reverse bias voltage range of 0.00-0.40 V. The GaN films have been epitaxially grown by metal organic chemical vapor deposition on c-plane Al2O3 substrate. The measurement frequency (f) ranges from 1.0 kHz to 10 MHz. The slow and fast interface states with two time constants differing by about two orders of magnitude have been calculated from analysis of the reverse bias C-f and C-f characteristics. The interface state density has values of 10(10)-10(11) eV(-1) cm(-2) and time constant has taken the values which change in range of 10(-5)-10(-7) s. The phase angle versus bias voltage curves have shown at four different frequencies at the room temperature that the device behaves more capacitive at the reverse bias region rather than the forward bias region at 100 and 200 kHz. (C) 2014 Elsevier B.V. All rights reserved,