The effective barrier heights and ideality factors of identically fabricated Ni/n-type 6 H-SiC Schottky diodes (23 dots) have been calculated from their experimental forward bias current-voltage (I-V) and reverse bias capacitance-voltage (C-V) characteristics. A statistical study related to the experimental barrier heights (BHs) and ideality factors of the diodes has been made. The effective Schottky barrier heights (SBHs) and ideality factors obtained from the I-V and C-V characteristics have differed from diode to diode. The BHs obtained from the I-V characteristics varied from 0.85 to 1.03 eV, the ideality factors varied from 1.13 to 1.40 and the BHs from C-2-V characteristics varied from 1.10 to 1.70 eV. The experimental BH and ideality factor distributions obtained from the I-V characteristics are fitted by a Gaussian function, and their mean values are found to be 0.92 +/- 0.04 eV and 1.29 +/- 0.08 eV, respectively. The lateral homogeneous SBH value of 1.16 eV for the Ni/n-type 6H-SiC diodes has been calculated from a linear extrapolation of the effective barrier heights to n(if)=1.03.