In this study, we fabricated an Al/Azure A/p-Si heterojunction. The electrical characterization and photovoltaic properties of the Al/Azure A/p-Si heterojunction were investigated by current-voltage (I-V) under dark and illuminated conditions at room temperature. The photovoltaic device gives V-oc = 340 mV and I-sc = 807 mu A under 30 mW cm(-2). The device was found to have a fill factor (FF) and power conversion efficiency (eta(P)) 36% and 4.07%, respectively. The values of some diode parameters were determined using thermionic emission theory. Some diode parameters, such as the ideality factor (n) and barrier height (phi(b)) values, were found to be 1.26 and 0.78 eV, respectively. An ideality factor higher than 1 can be explained on the basis of the inhomogeneity barrier-height model or as a result of natural oxide layers. The results obtained from electrical and photovoltaic properties show that the device can be used as photodiode and in opto-electronic circuit applications.