Temperature-dependent electrical characteristics of Alq3/p-Si heterojunction

KARABULUT A., Orak I., Canli S., YILDIRIM N., TÜRÜT A.

PHYSICA B-CONDENSED MATTER, vol.550, pp.68-74, 2018 (Peer-Reviewed Journal) identifier

  • Publication Type: Article / Article
  • Volume: 550
  • Publication Date: 2018
  • Doi Number: 10.1016/j.physb.2018.08.029
  • Journal Name: PHYSICA B-CONDENSED MATTER
  • Journal Indexes: Science Citation Index Expanded, Scopus
  • Page Numbers: pp.68-74
  • Keywords: Electrical characteristics, Alq3, Spin coating, Organic interfacial layer, Heterojunction, CURRENT-VOLTAGE CHARACTERISTICS, I-V-T, SCHOTTKY DIODES, CAPACITANCE-VOLTAGE, BARRIER HEIGHT, AU/N-GAAS, CONTACTS, INHOMOGENEITIES, PARAMETERS, DEVICES

Abstract

Al/Alq3(organic materials)/p-Si device was fabricated by the use of spin coaling technique, and it was investigated by using current-voltage measurement in a wide temperature range from 80 to 320 K with 20 K steps. Some device parameters such as ideality factor, barrier height and series resistance values were determined by the use of standard thermionic emission theory and Norde functions, and the values found were compared with other studies. It was seen that all parameters of fabricated device strongly depended on temperature changes. AFM and SEM images were taken for better understanding surface morphology, and addressed in detail. The results of experiments suggest that the fabricated device with Alq3 organic interfacial layer could be used effectively in the temperature-dependent device applications for developing electronic technology.