JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY, cilt.289, ss.145-148, 2011 (SCI İndekslerine Giren Dergi)
Different radiation and temperature effects on Schottky diodes are technologically important from radiation to sensing applications. We discussed irradiation and temperature dependent electronic properties of Pt/n-InP Schottky contact. Firstly we fabricated Pt/n-InP Schottky diode by magnetron sputtering technique. Then sample was exposed to 12 MeV electron irradiation. We measured I-V characteristics in 20, 160, 300 and 400 K before and after irradiation. Changes in forward currents for 160, 300 and 400 K were not remarkable but irradiation was effective only in 20 K slightly. Reverse currents of Pt/n-InP Schottky diode were increased in 20, 160, 300 and 400 K by irradiation.