Responses of Pt/n-InP Schottky diode to electron irradiation in different temperature conditions

Akbay A., Korkut H., Ejderha K., Korkut T., TÜRÜT A.

JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY, cilt.289, ss.145-148, 2011 (SCI İndekslerine Giren Dergi)

  • Cilt numarası: 289 Konu: 1
  • Basım Tarihi: 2011
  • Doi Numarası: 10.1007/s10967-011-1041-y
  • Dergi Adı: JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY
  • Sayfa Sayısı: ss.145-148

Özet

Different radiation and temperature effects on Schottky diodes are technologically important from radiation to sensing applications. We discussed irradiation and temperature dependent electronic properties of Pt/n-InP Schottky contact. Firstly we fabricated Pt/n-InP Schottky diode by magnetron sputtering technique. Then sample was exposed to 12 MeV electron irradiation. We measured I-V characteristics in 20, 160, 300 and 400 K before and after irradiation. Changes in forward currents for 160, 300 and 400 K were not remarkable but irradiation was effective only in 20 K slightly. Reverse currents of Pt/n-InP Schottky diode were increased in 20, 160, 300 and 400 K by irradiation.