Responses of Pt/n-InP Schottky diode to electron irradiation in different temperature conditions

Akbay A., Korkut H., Ejderha K., Korkut T., TÜRÜT A.

JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY, vol.289, no.1, pp.145-148, 2011 (Peer-Reviewed Journal) identifier

  • Publication Type: Article / Article
  • Volume: 289 Issue: 1
  • Publication Date: 2011
  • Doi Number: 10.1007/s10967-011-1041-y
  • Journal Name: JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY
  • Journal Indexes: Science Citation Index Expanded, Scopus
  • Page Numbers: pp.145-148

Abstract

Different radiation and temperature effects on Schottky diodes are technologically important from radiation to sensing applications. We discussed irradiation and temperature dependent electronic properties of Pt/n-InP Schottky contact. Firstly we fabricated Pt/n-InP Schottky diode by magnetron sputtering technique. Then sample was exposed to 12 MeV electron irradiation. We measured I-V characteristics in 20, 160, 300 and 400 K before and after irradiation. Changes in forward currents for 160, 300 and 400 K were not remarkable but irradiation was effective only in 20 K slightly. Reverse currents of Pt/n-InP Schottky diode were increased in 20, 160, 300 and 400 K by irradiation.