The electrical characteristics of NiTi/n-GaAs Schottky barrier diodes annealed at temperatures from 100 to 300 degrees C for 5 min and from 350 to 650 degrees C for 1 min have been investigated as a function of annealing temperature, with the use of current-voltage (I-V) techniques. The Schottky barrier height Phi(b) and ideality factor n range from 0.57 eV and 1.06 for as-deposited sample to 0.84 eV and 1.06 for 450 degrees C annealing for 1 min, and 0.80 eV and 1.10 for 500 degrees C. The barrier height for these contacts increases with increasing annealing temperature. The thermal annealing proceeding has been seen to be useful for improving the electrical characteristics of NiTi evaporation on Liquid Encapsulated Czochralski (LEC) GaAs. This can be ascribed to thermal stability of the NiTi alloy/n-GaAs SBDs. The contact properties of the Schottky diodes deteriorated and became nearly ohmic above 650 degrees C for 1 min. (C) 1999 Elsevier Science Ltd. All rights reserved.