Current-Voltage and Capacitance-Conductance-Voltage Characteristics of Al/SiO2/p-Si and Al/Methyl Green (MG)/p-Si Structures


Duman S., Ozcelik F. S. , GÜRBULAK B., GÜLNAHAR M., TÜRÜT A.

METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, ss.347-353, 2015 (SCI İndekslerine Giren Dergi)

  • Basım Tarihi: 2015
  • Doi Numarası: 10.1007/s11661-014-2621-6
  • Dergi Adı: METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE
  • Sayfa Sayısı: ss.347-353

Özet

The organic methyl green (MG) has been investigated for the first time for its electronic applications. In order to see the effect of organic MG layer on electrical characteristics of Al/p-Si diode, Al/MG/p-Si structure has been fabricated by inexpensive and simple "drop coating" method. The current-voltage (I-V) and capacitance-conductance-voltage (C-G-V) characteristics of Al/SiO2/p-Si and Al/MG/p-Si structures have been investigated. The parameters such as ideality factor (n), barrier height (), series and shunt resistance, and the density of interface states have been investigated using current-voltage measurements, in dark and under illumination conditions at room temperature. The n and values of 1.56 and 0.81 eV for Al/SiO2/p-Si and 1.36 and 0.80 eV for Al/MG/p-Si are calculated from the forward bias I-V characteristics. The value of the Al/SiO2/p-Si structure at room temperature is larger than that of conventional Al/p-Si diode. It is seen that the n value of 1.36 calculated for the Al/MG/p-Si structure is lower than most of the metal/organic compound/inorganic semiconductor devices.