An anthracene film has been deposited on an n-type silicon to fabricate an Aufanthracene/n-Si junction device. The band gap of the anthracene film has been determined from the optical measurement as E-g = 1.65 eV. After the fabrication of the Au/anthracene/n-Si junction device, temperature dependent capacitance-voltage characteristics in the range of 160-300 K were studied to obtain the junction parameters of the device. The diffusion potential, barrier height. Fermi energy level and donor concentration parameters have been determined from the linear 1/C-2-V curves with reverse bias at all temperatures. Both Fermi energy level and the barrier height increased with the increasing temperature. Temperature-dependence of the barrier height has been attributed to inhomogeneous Limier, traps and interface states. The ionized donor concentrations have varied with the temperature in an unsystematic manner due to the trapping/de-trapping of the charges at various temperatures. (C) 2015 Elsevier B.V. All tights reserved.