The effect of electron irradiation on the electrical characteristics of the Aniline Blue/n-Si/Al device

Aydoğan Ş., Şerifoğlu K., TÜRÜT A.

SOLID STATE SCIENCES, vol.13, no.7, pp.1369-1374, 2011 (Peer-Reviewed Journal) identifier

  • Publication Type: Article / Article
  • Volume: 13 Issue: 7
  • Publication Date: 2011
  • Doi Number: 10.1016/j.solidstatesciences.2011.03.023
  • Journal Name: SOLID STATE SCIENCES
  • Journal Indexes: Science Citation Index Expanded, Scopus
  • Page Numbers: pp.1369-1374
  • Keywords: Electron irradiation, Aniline Blue, Schottky barrier, Ideality factor, Series resistance, CURRENT-VOLTAGE CHARACTERISTICS, GAN SCHOTTKY DIODES, TEMPERATURE, DEPENDENCE, GAAS

Abstract

The effect of 12 MeV energy (3 x 10(12) e(-)/cm(2) fluency) electron irradiation on Au/Aniline Blue(AB)/n-Si/Al rectifying device has been studied in terms of the current-voltage (I-V), capacitance voltage (C-V), and capacitance-frequency (C-f) measurements at room temperature. It has been observed that the electron irradiation causes an increase in the ideality factor and barrier height. The detected changes in I-V characteristics have been explained by the formation of radiation-induced point defects. A decrease in the capacitance has been observed after electron irradiation. This has been attributed to a decrease in the net ionized dopant concentration that occurred as a result of electron irradiation. (C) 2011 Elsevier Masson SAS. All rights reserved.