The effect of 12 MeV energy (3 x 10(12) e(-)/cm(2) fluency) electron irradiation on Au/Aniline Blue(AB)/n-Si/Al rectifying device has been studied in terms of the current-voltage (I-V), capacitance voltage (C-V), and capacitance-frequency (C-f) measurements at room temperature. It has been observed that the electron irradiation causes an increase in the ideality factor and barrier height. The detected changes in I-V characteristics have been explained by the formation of radiation-induced point defects. A decrease in the capacitance has been observed after electron irradiation. This has been attributed to a decrease in the net ionized dopant concentration that occurred as a result of electron irradiation. (C) 2011 Elsevier Masson SAS. All rights reserved.