In present work, photocurrent, current- voltage (I-V) and capacitance/conductance-voltage- frequency (C/G-V-f) measurements were analyzed for the photodiode and diode parameters of Al/TiO2/p-Si structure. The TiO2 thin film structure was deposited on p-Si by using atomic layer deposition technique (ALD) and its thickness was about 10 nm. The surface morphology of TiO2 coated on p-Si structure was observed via atomic force microscope (AFM). Barrier height (Phi(b)) and ideality factor (n) values of device were found to be 0.80 eV, 0.70 eV, 0.56 eV and 1.04, 2.24, 10.27 under dark, 10 and 100 mW/cm(2), respectively. Some photodiodes parameters such as fill factor (FF), power efficiency (%eta), open circuit voltage (V-oc), short circuit current (I-sc) were obtained from I-V measurement under different light intensity. FF and. were accounted 49.2, 39,0 and 0.05, 0.45 under 10 and 100 mW/cm(2) light power intensity, respectively. C-2-V graph was plotted from C-V-f measurements and zero bias voltage (V-0), donor concentration (N-d), Fermi energy (E-F), barrier height (Phi(b)) and maximum electric field (E-m) were determined from C-2-V data for different frequencies. The electrical and photocurrent values demonstrated that it can be used for photodiode, photo detector and photo sensing applications.