We have identically prepared as many as 60 Ti/p-Si (100) Schottky barrier diodes (SBDs) with a doping density of about 10(15) cm(-3). The Si (100)-H surfaces were obtained by wet chemical etching in diluted hydrofloric acid. We have made a statistical study related to the experimental barrier heights (BHs) and ideality factors of the diodes, and we have looked at linear relationship between BHs and ideality factors. The BHs obtained from the current-voltage (I-V) characteristics varied from 0.556 to 0.617 eV, and the ideality factor varied from 1.019 to 1.196. The experimental BH and ideality factor distributions obtained from the I-V characteristics were fitted by a Gaussian function, and their mean values were found to be 0.577 +/- 0.013 eV and 1.098 +/- 0.044, respectively. Furthermore, the homogeneous BH value of approximately 0.602 eV for the device was obtained from the linear relationship between experimental effective BHs and ideality factors.