Precursor vapor deposited perovskite solar cells with smooth absorber layer

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Coşkun F. M. , Değirmenci F., Köse M. E.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, vol.1, no.1, pp.104813-104814, 2020 (Journal Indexed in SCI) identifier

  • Publication Type: Article / Article
  • Volume: 1 Issue: 1
  • Publication Date: 2020
  • Doi Number: 10.1016/j.mssp.2019.104813
  • Page Numbers: pp.104813-104814


Preparation of a smooth methylammoniumleadiodide (CH3NH3PbI3) perovskite absorber film is one of the most

critical processes in fabricating a perovskite photovoltaic cell with high efficiency. In this study, we report an

original coating method to prepare CH3NH3PbI3 films by using the solvent vapors of precursor methylamine

(MA) and hydroiodic acid (HI) solutions on lead (II) iodide (PbI2) thin films. In this strategy, the vapors of MA

and HI solutions were briefly treated to the PbI2 coated substrate and then the resultant film was annealed to

obtain smooth perovskite thin layer. After the topographic analyses of the thin films, the surface roughnesses of

the perovskite films were found to be limited by the surface roughnesses of the PbI2 films before precursor vapor

exposure. Another important aspect of our approach is that there is no need to synthesize methylammonium

iodide (CH3NH3I) salt for active layer preparation. Furthermore, this method enables large-area fabrication of

high quality films by a very simple and brief process. After the characterization of preliminary devices with this

method, we obtained a short circuit current density of 14.67 mA/cm2, an open circuit voltage of 0.815 V, a fillfactor

of 0.59, and a power conversion efficiency of 7.08%.