Yayınlar & Eserler

SCI, SSCI ve AHCI İndekslerine Giren Dergilerde Yayınlanan Makaleler

Electrical characterization of Ir doped rare-earth orthoferrite YbFeO3

JOURNAL OF ALLOYS AND COMPOUNDS, cilt.787, ss.1212-1224, 2019 (SCI İndekslerine Giren Dergi) Özet

Effect of Os doping on electrical properties of YMnO3 multiferroic perovskite-oxide compounds

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.91, ss.281-289, 2019 (SCI İndekslerine Giren Dergi) Özet

Tailoring the band gap of ferroelectric YMnO3 through tuning the Os doping level

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.30, ss.3443-3451, 2019 (SCI İndekslerine Giren Dergi) Özet

Temperature-dependent electrical characteristics of Alq3/p-Si heterojunction

PHYSICA B-CONDENSED MATTER, cilt.550, ss.68-74, 2018 (SCI İndekslerine Giren Dergi) Özet

The characterization of electrical properties of Pd-doped LaCrO3 perovskite structure

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.29, ss.16939-16955, 2018 (SCI İndekslerine Giren Dergi) Özet

CURRENT-VOLTAGE CHARACTERISTICS OF THERMALLY ANNEALED Ni/n-GaAs SCHOTTKY CONTACTS

SURFACE REVIEW AND LETTERS, cilt.25, 2018 (SCI İndekslerine Giren Dergi) Özet

The electrical and dielectric properties of the Au/Ti/Hf02/n-GaAs structures

JOURNAL OF MOLECULAR STRUCTURE, cilt.1157, ss.513-518, 2018 (SCI İndekslerine Giren Dergi) Özet

Engineering the band gap of LaCrO3 doping with transition metals (Co, Pd, and Ir)

JOURNAL OF MATERIALS SCIENCE, cilt.53, ss.3544-3556, 2018 (SCI İndekslerine Giren Dergi) Özet

Temperature dependent dielectric properties of Au/ZnO/n-Si heterojuntion

MATERIALS RESEARCH EXPRESS, cilt.5, 2018 (SCI İndekslerine Giren Dergi) Özet

Temperature-dependent C-V characteristics of Au/ZnO/n-Si device obtained by atomic layer deposition technique

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.28, ss.5880-5886, 2017 (SCI İndekslerine Giren Dergi) Özet

Electronic Transport of an Ni/n-GaAs Diode Analysed Over a Wide Temperature Range

JOURNAL OF ELECTRONIC MATERIALS, cilt.45, ss.2808-2814, 2016 (SCI İndekslerine Giren Dergi) Özet

Capacitance-conductance-current-voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.39, ss.400-407, 2015 (SCI İndekslerine Giren Dergi) Özet

The electrical characterizations and illumination response of Co/N-type GaP junction device

CURRENT APPLIED PHYSICS, cilt.15, ss.1054-1061, 2015 (SCI İndekslerine Giren Dergi) Özet

Electronic Properties of Cu/n-InP Metal-Semiconductor Structures with Cytosine Biopolymer

ACTA PHYSICA POLONICA A, cilt.128, ss.383-388, 2015 (SCI İndekslerine Giren Dergi) Özet

Electronic parameters of MIS Schottky diodes with DNA biopolymer interlayer

MATERIALS SCIENCE-POLAND, cilt.33, ss.593-600, 2015 (SCI İndekslerine Giren Dergi) Özet

Preparation and characterization of sol-gel-derived n-ZnO thin film for Schottky diode application

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, cilt.119, ss.547-552, 2015 (SCI İndekslerine Giren Dergi) Özet

Capacitance-conductance-frequency characteristics of Au/Ni/n-GaN/undoped GaN Structures

PHYSICA B-CONDENSED MATTER, cilt.457, ss.48-53, 2015 (SCI İndekslerine Giren Dergi) Özet

Current-Voltage and Capacitance-Conductance-Voltage Characteristics of Al/SiO2/p-Si and Al/Methyl Green (MG)/p-Si Structures

METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, ss.347-353, 2015 (SCI İndekslerine Giren Dergi) Özet

On the electrical characteristics of the Al/rhodamine-101/p-Si MS structure at low temperatures

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.28, ss.135-143, 2014 (SCI İndekslerine Giren Dergi) Özet

International Semiconductor Science and Technology Conference, ISSTC-2014

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.28, ss.1, 2014 (SCI İndekslerine Giren Dergi)

Temperature dependence of Schottky diode characteristics prepared with photolithography technique

INTERNATIONAL JOURNAL OF ELECTRONICS, cilt.101, ss.1595-1606, 2014 (SCI İndekslerine Giren Dergi) Özet

Electrical properties and interface state energy distributions of Cr/n-Si Schottky barrier diode

SUPERLATTICES AND MICROSTRUCTURES, cilt.64, ss.483-494, 2013 (SCI İndekslerine Giren Dergi) Özet

THE CURRENT-VOLTAGE CHARACTERISTICS OF THE Au/MBE n-GaAs SCHOTTKY DIODES IN A WIDE TEMPERATURE RANGE

INTERNATIONAL JOURNAL OF MODERN PHYSICS B, cilt.27, 2013 (SCI İndekslerine Giren Dergi) Özet

Origin of forward bias capacitance peak and intersection behavior of C and G/w of Ag/p-InP Schottky barrier diodes

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.16, ss.344-351, 2013 (SCI İndekslerine Giren Dergi) Özet

Determination of contact parameters of Ni/n-GaP Schottky contacts

MICROELECTRONICS RELIABILITY, cilt.52, ss.1005-1011, 2012 (SCI İndekslerine Giren Dergi) Özet

E High barrier Schottky diode with organic interlayer

Solid State Communications, cilt.152, 2012 (SCI İndekslerine Giren Dergi)

Temperature-dependent I-V characteristics in thermally annealed Co/p-InP contacts

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, cilt.57, 2012 (SCI İndekslerine Giren Dergi) Özet

Effects of ageing on the electrical characteristics of Cd/CdS/n-Si/Au-Sb structure deposited by SILAR method

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, cilt.72, ss.1506-1514, 2011 (SCI İndekslerine Giren Dergi) Özet

Responses of Pt/n-InP Schottky diode to electron irradiation in different temperature conditions

JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY, cilt.289, ss.145-148, 2011 (SCI İndekslerine Giren Dergi) Özet

Dependence of characteristic diode parameters on sample temperature in Ni/epitaxy n-Si contacts

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.14, ss.5-12, 2011 (SCI İndekslerine Giren Dergi) Özet

Schottky barrier height modification in Au/n-type 6H-SiC structures by PbS interfacial layer

MICROELECTRONIC ENGINEERING, cilt.88, ss.179-182, 2011 (SCI İndekslerine Giren Dergi) Özet

Electronic properties of Al/DNA/p-Si MIS diode: Application as temperature sensor

JOURNAL OF ALLOYS AND COMPOUNDS, cilt.509, ss.571-577, 2011 (SCI İndekslerine Giren Dergi) Özet

Electrical analysis of organic dye-based MIS Schottky contacts

MICROELECTRONIC ENGINEERING, cilt.87, ss.2482-2487, 2010 (SCI İndekslerine Giren Dergi) Özet

Extraction of electronic parameters of Schottky diode based on an organic Orcein

MICROELECTRONIC ENGINEERING, cilt.87, ss.2525-2530, 2010 (SCI İndekslerine Giren Dergi) Özet

Barrier height temperature coefficient in ideal Ti/n-GaAs Schottky contacts

MICROELECTRONIC ENGINEERING, cilt.87, ss.1781-1784, 2010 (SCI İndekslerine Giren Dergi) Özet

Determination of contact parameters of Au/Carmine/n-Si Schottky device

THIN SOLID FILMS, cilt.518, ss.7156-7160, 2010 (SCI İndekslerine Giren Dergi) Özet

n-type InP Schottky diodes with organic thin layer: Electrical and interfacial properties

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, cilt.28, ss.466-472, 2010 (SCI İndekslerine Giren Dergi) Özet

Electrical properties of safranine T/p-Si organic/inorganic semiconductor devices

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, cilt.50, 2010 (SCI İndekslerine Giren Dergi) Özet

Electronic properties of the metal/organic interlayer/inorganic semiconductor sandwich device

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, cilt.71, ss.351-356, 2010 (SCI İndekslerine Giren Dergi) Özet

Electrical characterization of the Al/new fuchsin/n-Si organic-modified device

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, cilt.42, ss.1411-1416, 2010 (SCI İndekslerine Giren Dergi) Özet

Thermal annealing effects on I-V-T characteristics of sputtered Cr/n-GaAs diodes

PHYSICA B-CONDENSED MATTER, cilt.404, ss.4039-4044, 2009 (SCI İndekslerine Giren Dergi) Özet

DEPENDENCE OF CHARACTERISTIC DIODE PARAMETERS IN Ni/n-GaAs CONTACTS ON THERMAL ANNEALING AND SAMPLE TEMPERATURE

INTERNATIONAL JOURNAL OF MODERN PHYSICS B, cilt.23, ss.5237-5249, 2009 (SCI İndekslerine Giren Dergi) Özet

Electrical characterization of Au/n-ZnO Schottky contacts on n-Si

JOURNAL OF ALLOYS AND COMPOUNDS, cilt.476, ss.913-918, 2009 (SCI İndekslerine Giren Dergi) Özet

Series resistance determination of Au/Polypyrrole/p-Si/Al structure by current-voltage measurements at low temperatures

MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, cilt.29, ss.1486-1490, 2009 (SCI İndekslerine Giren Dergi) Özet

Analysis of current-voltage-temperature characteristics and T-0 anomaly in Cr/n-GaAs Schottky diodes fabricated by magnetron sputtering technique

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, cilt.157, ss.48-52, 2009 (SCI İndekslerine Giren Dergi) Özet

Temperature-dependent current-voltage and capacitance-voltage characteristics of the Ag/n-InP/In Schottky diodes

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.20, ss.105-112, 2009 (SCI İndekslerine Giren Dergi) Özet

Temperature-dependent current-voltage characteristics of Cr/n-GaAs Schottky diodes

MICROELECTRONIC ENGINEERING, cilt.86, ss.111-116, 2009 (SCI İndekslerine Giren Dergi) Özet

Temperature-dependent Schottky barrier inhomogeneity of Ni/n-GaAs diodes

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, cilt.45, 2009 (SCI İndekslerine Giren Dergi) Özet

DNA-based organic-on-inorganic devices: Barrier enhancement and temperature issues

MICROELECTRONIC ENGINEERING, cilt.85, ss.2250-2255, 2008 (SCI İndekslerine Giren Dergi) Özet

Electrical characteristics and inhomogeneous barrier analysis of aniline green/p-Si heterojunctions

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.19, ss.986-991, 2008 (SCI İndekslerine Giren Dergi) Özet

Photovoltaic and electronic properties of quercetin/p-InP solar cells

SOLAR ENERGY MATERIALS AND SOLAR CELLS, cilt.92, ss.1205-1210, 2008 (SCI İndekslerine Giren Dergi) Özet

Fabrication and Electrical Characteristics of Al/PSP/n-Si/AuSb structure

Vacuum, cilt.82, ss.1264-1268, 2008 (SCI İndekslerine Giren Dergi)

Electron irradiation effects on the organic-on-inorganic silicon Schottky structure

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, cilt.593, ss.544-549, 2008 (SCI İndekslerine Giren Dergi) Özet

Fabrication and electrical properties of Al/Safranin T/n-Si/AuSb structure

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, cilt.23, 2008 (SCI İndekslerine Giren Dergi) Özet

Fabrication and electrical characteristics of Schottky diode based on organic material

MICROELECTRONIC ENGINEERING, cilt.85, ss.1647-1651, 2008 (SCI İndekslerine Giren Dergi) Özet

DNA-based organic-on-inorganic semiconductor Schottky structures

APPLIED SURFACE SCIENCE, cilt.254, ss.5175-5180, 2008 (SCI İndekslerine Giren Dergi) Özet

Fabrication and electrical properties of organic-on-inorganic Schottky devices

JOURNAL OF PHYSICS-CONDENSED MATTER, cilt.20, 2008 (SCI İndekslerine Giren Dergi) Özet

DNA-modified indium phosphide Schottky device

APPLIED PHYSICS LETTERS, cilt.92, 2008 (SCI İndekslerine Giren Dergi) Özet

The barrier-height inhomogeneity in identically prepared Ni/n-type 6H-SiC Schottky diodes

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, cilt.91, ss.337-340, 2008 (SCI İndekslerine Giren Dergi) Özet

Fabrication and electrical properties of Al/aniline green/n-Si/AuSb structure

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.11, ss.53-58, 2008 (SCI İndekslerine Giren Dergi) Özet

Temperature-dependent behavior of Ti/p-InP/ZnAu schottky barrier diodes

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, cilt.23, 2008 (SCI İndekslerine Giren Dergi) Özet

The electrical characteristics of sn/methyl-red/p-type Si/Al contacts

MICROELECTRONIC ENGINEERING, cilt.84, ss.2875-2882, 2007 (SCI İndekslerine Giren Dergi) Özet

Temperature-dependent behavior of Ni/4H-nSiC Schottky contacts

JOURNAL OF APPLIED PHYSICS, cilt.102, 2007 (SCI İndekslerine Giren Dergi) Özet

Determination of the lateral barrier height of inhomogeneous Au/n-type InP/In Schottky barrier diyotes

Semiconductor Science and Technology, cilt.22, ss.851-854, 2007 (SCI İndekslerine Giren Dergi)

The electrical measurements in poly(2-chloroaniline) based thin film sandwich devices

THIN SOLID FILMS, cilt.515, ss.7253-7258, 2007 (SCI İndekslerine Giren Dergi) Özet

Electrical properties of Sn/p-Si (MS) Schottky barrier diodes to be exposed to (CO)-C-60 gamma-ray source

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, cilt.566, ss.584-589, 2006 (SCI İndekslerine Giren Dergi) Özet

Determination of the characteristic parameters of Sn/n-GaAs/Al-Ge Schottky diodes by a barrier height inhomogeneity model

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, cilt.21, ss.822-828, 2006 (SCI İndekslerine Giren Dergi) Özet

Electrical properties of polypyrrole/p-InP structure

JOURNAL OF POLYMER SCIENCE PART B-POLYMER PHYSICS, cilt.44, ss.1572-1579, 2006 (SCI İndekslerine Giren Dergi) Özet

The temperature dependence of current-voltage characteristics of the Au/Polypyrrole/p-Si/Al heterojunctions

JOURNAL OF PHYSICS-CONDENSED MATTER, cilt.18, ss.2665-2676, 2006 (SCI İndekslerine Giren Dergi) Özet

The double Gaussian distribution of barrier heights in Au/n-GaAs Schottky diodes from I-V-T characteristics

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, cilt.21, ss.298-302, 2006 (SCI İndekslerine Giren Dergi) Özet

Effects of Co-60 gamma-ray irradiation on the electrical characteristics of Au/n-GaAs (MS) structures

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, cilt.555, ss.260-265, 2005 (SCI İndekslerine Giren Dergi) Özet

On the some electrical properties of the non-ideal PPy/p-Si/Al structure

POLYMER, cilt.46, ss.10982-10988, 2005 (SCI İndekslerine Giren Dergi) Özet

Barrier height enhancement and stability of the Au/n-InP Schottky barrier diodes oxidized by absorbed water vapor

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, cilt.23, ss.2436-2443, 2005 (SCI İndekslerine Giren Dergi) Özet

On the barrier inhomogeneities of polyaniline/p-Si/Al structure at low temperature

APPLIED SURFACE SCIENCE, cilt.250, ss.43-49, 2005 (SCI İndekslerine Giren Dergi) Özet

Current-voltage-temperature analysis of inhomogeneous Au/n-GaAs Schottky contacts

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, cilt.31, ss.79-86, 2005 (SCI İndekslerine Giren Dergi) Özet

Ti/p-Si Schottky barrier diodes with interfacial layer prepared by thermal oxidation

PHYSICA B-CONDENSED MATTER, cilt.364, ss.133-141, 2005 (SCI İndekslerine Giren Dergi) Özet

Low- and high-frequency C-V characteristics of the contacts formed by sublimation of the nonpolymeric organic compound on p-type Si substrate

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, cilt.201, ss.3077-3086, 2004 (SCI İndekslerine Giren Dergi) Özet

The barrier-height inhomogeneity in identically prepared H-terminated Ti/p-Si Schottky barrier diodes

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, cilt.19, ss.1113-1116, 2004 (SCI İndekslerine Giren Dergi) Özet

The effects of the ageing on the characteristic parameters of polyaniline/p-type Si/Al structure

APPLIED SURFACE SCIENCE, cilt.230, ss.404-410, 2004 (SCI İndekslerine Giren Dergi) Özet

Rectifying pyronine-B/p-type silicon junctions formed by sublimation of pyronine-B

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.15, ss.47-53, 2004 (SCI İndekslerine Giren Dergi) Özet

The barrier height inhomogeneity in identically prepared Pb/p-type SiSchottky barrier diodes

Semiconductor Science and Technology, cilt.18, 2003 (SCI İndekslerine Giren Dergi)

The Cu/n-GaAs Schottky barrier diodes prepared by anodization process

JOURNAL OF ELECTRONIC MATERIALS, cilt.31, ss.1362-1368, 2002 (SCI İndekslerine Giren Dergi) Özet

Barrier height enhancement in the Au/n-GaAs Schottky diodes with anodization process

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, cilt.20, ss.10-13, 2002 (SCI İndekslerine Giren Dergi) Özet

The effect of anodic oxide treatment on n-GaAs Schottky barrier diodes

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.12, ss.575-579, 2001 (SCI İndekslerine Giren Dergi) Özet

Reverse bias capacitance-voltage characteristics of Au/n-GaAs Schottky diodes under hydrostatic pressure

INTERNATIONAL JOURNAL OF ELECTRONICS, cilt.87, ss.1171-1176, 2000 (SCI İndekslerine Giren Dergi) Özet

An investigation of I-V characteristics of Au/n-GaAs Schottky diodes after hydrostatic pressure

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, cilt.179, ss.469-473, 2000 (SCI İndekslerine Giren Dergi) Özet

Effect of thermal annealing on Co/n-LEC GaAs (Te) Schottky contacts

SOLID STATE COMMUNICATIONS, cilt.115, ss.291-295, 2000 (SCI İndekslerine Giren Dergi) Özet

The effect of the time-dependent and expore time to air on Au/Epilayer n-Si Schottky Diodes

The European Physical Journal Applied Physics, cilt.6, 1999 (SCI İndekslerine Giren Dergi)

Thermal stability of NiTi alloy contacts on n-type liquid encapsulated Czochralski GaAs

SOLID STATE COMMUNICATIONS, cilt.110, ss.419-423, 1999 (SCI İndekslerine Giren Dergi) Özet

Thermal treatment of the MIS and intimate Ni/n-LEC GaAs Schottky barrier diodes

APPLIED SURFACE SCIENCE, cilt.135, ss.350-356, 1998 (SCI İndekslerine Giren Dergi) Özet

Thermal stability of Cr-Ni-Co alloy Schottky contacts on MBE n-GaAs

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, cilt.13, ss.776-780, 1998 (SCI İndekslerine Giren Dergi) Özet

Effect of thermal annealing in nitrogen on the I-V and C-V characteristics of Cr-Ni-Co alloy/LEC n-GaAs Schottky diodes

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, cilt.12, ss.1028-1031, 1997 (SCI İndekslerine Giren Dergi) Özet

High barrier metallic polymer p-type silicon Schottky diodes

SOLID-STATE ELECTRONICS, cilt.39, ss.677-680, 1996 (SCI İndekslerine Giren Dergi) Özet

Polyindole-based Schottky diode

Tr. J. of Chemistry, cilt.18, 1994 (SCI İndekslerine Giren Dergi)

METALLIC POLYTHIOPHENE INORGANIC SEMICONDUCTOR SCHOTTKY DIODES

PHYSICA B, cilt.192, ss.279-283, 1993 (SCI İndekslerine Giren Dergi) Özet

SEMICONDUCTIVE POLYMER-BASED SCHOTTKY DIODE

JOURNAL OF APPLIED PHYSICS, cilt.72, ss.818-819, 1992 (SCI İndekslerine Giren Dergi) Özet

Diğer Dergilerde Yayınlanan Makaleler

Electrical characteristics of Au/Ti/HfO2/n-GaAs metal-insulator-semiconductor structures with high-k interfacial layer

International Journal of Chemistry and Technology, cilt.2, no.2, ss.116-122, 2018 (Hakemli Üniversite Dergisi)
Link

Characteristic diode parameters in thermally annealed Ni/p-InP contacts

JOURNAL OF SEMICONDUCTORS, cilt.37, 2016 (ESCI İndekslerine Giren Dergi) Özet

Determination of barrier height temperature coefficient by Norde’s method in ideal Co/n-GaAs Schottky contacts

TURKISH JOURNAL OF PHYSICS, cilt.36, ss.235-244, 2012 (Diğer Kurumların Hakemli Dergileri)
Link

Hakemli Kongre / Sempozyum Bildiri Kitaplarında Yer Alan Yayınlar

Current Voltage and Capacitance Voltage Characteristics of Sputtered Ni/n-GaAs Schottky diodes

International Congress on Semiconductor Materials and Devices” (ICSMD-2017), Konya, Türkiye, 17 Ağustos 2017, ss.17
Link

The electrical and dielectric properties of Au/Ti/HfO2/n-GaAs structures in wide temperature range

4th INTERNATIONAL CONFERENCE ON MATERIALS SCIENCE AND NANOTECHNOLOGY FOR NEXT GENERATION (MSNG2017), Sarajevo/Bosnıa, Bosna-Hersek, 28 Haziran 2017, ss.320-323
Link

Some Electrical Characteristics Of GaAs–Based MIS Structures With Atomic Layer Deposited Thin HfO2 Interfacial Layer

NANOSCIENCE&NANOTECHNOLOGY FOR NEXT GENERATION-NanoNG-2016, Antalya, Türkiye, 20 Ekim 2016, ss.83
Link

Characteristic diode parameters of thermally annealed Ni/n-GaAs Schottky contacts over a wide measurement temperature range

International Physics Conference at the Anatolian Peak, IPCAP 2016, Erzurum, Türkiye, 25 Şubat 2016, ss.57
Link

Atomic Layer Deposited Ultra Thin HfO2 Interfacial Layer Grown on GaAs-based MIS Structure in 60-400 K Temperature Range

International Conference On Nanoscience and Nanotechnology For Next Generation-Nanong, Antalya, Türkiye, 29 Ekim 2015

Electrical Parameters of Safranine T/n-Si Contacts

9 th International Physics Conference of The Balcan Physical Union BPU-9, İstanbul, Türkiye, 24 Ağustos 2015

I-V and C-V-f Characteristics of Anniline Green/n-Type Silicon Diode

9 th International Physics Conference of The Balcan Physical Union BPU-9, İstanbul, Türkiye, 24 Ağustos 2015

Current-Capacitance-Voltage Characteristics for the Au/Ti/Al2O3/n-GaAs Structure in 20-300 K range

International Semiconductor Science and Techology Conference-ISSTC, İzmir, Türkiye, 11 Mayıs 2015

Homogenous Barrier Height Work on Ni/EPI-n-Si structure

International Semiconductor Science and Technology Conference-2014, Türkiye, 01 Ocak 2014, ss.60

Effects Of The Radiation On Al/Organic Film/P-Silicon Semiconductor Diode

International Semiconductor Science and Technology Conference-2014, Türkiye, 01 Ocak 2014, ss.115

The Electrical and Photovoltaic Effect of Co/n-GaP Schottky Diode

International Semiconductor Science and Technology Conference-2014, Türkiye, 01 Ocak 2014, ss.72

Metal-Thickness Dependence On The Electrical Properties of Ideal Ti/n-GaAs Schottky Contacts

International Semiconductor Science and Technology Conference-2014, Türkiye, 01 Ocak 2014, ss.123

Capacitance–Voltage Characteristics Of Ni/Au/n-GaN Contacts

International Semiconductor Science and Technology Conference-2014, Türkiye, 01 Ocak 2014, ss.113

The comparison of electrical properties of Au/graphene/p-Si and graphene/p-Si

BSW2013 Fourth Scıence Workshop: Studies on Structure and Dynamıcs from Nucleus to Clusters, Yozgat,, Yozgat, Türkiye, 01 Mayıs 2013, ss.12

Investigation of photvoltaic property for sputtered Al/p-Si/Al structure

BSW2013 Fourth Scıence Workshop: Studies on Structure and Dynamıcs from Nucleus to Clusters, Yozgat,, Yozgat, Türkiye, 01 Mayıs 2013, ss.11-12

Investigation of electrical properties CrTi/n-GaN nano structure

BSW2013 Fourth Scıence Workshop: Studies on Structure and Dynamıcs from Nucleus to Clusters, Yozgat,, Yozgat, Türkiye, 01 Mayıs 2013, ss.13

A Molecular Dynamic Approachtothe Aggregation of Amyloid Aβ (17-21) Peptides

10. Kimyasal Fizik Kongresi (CPC-X), Ankara, Türkiye, 01 Ekim 2012, ss.90

Molecular Dynamics Simulations of Aβ(16-22) Peptides Aggregation

8. Nanoscience&Nanotechnology Congress, Ankara, Türkiye, 01 Haziran 2012, ss.734-207

Characterization Of Au/N-Inp Photovoltaic Structure With Organic Thin Film

4th Hybrid and Organic Photovoltaics Conference, İsveç, 01 Mayıs 2012

Some Considerable Effects on Pt/n-InP Schottky Diode Current-Voltage Characteristics due to Electron Irradiation

on advances in Applied Physics and Material Science (201) American Institute of Physics, Amerika Birleşik Devletleri, 01 Aralık 2011, cilt.1400, no.1, ss.497-501

Analysis of I-V Characteristics of Au/n-type GaAs Schottky diodes

Türk Fizik Derneği 23. Fizik Kongresi, Muğla, Türkiye, 01 Eylül 2005, ss.628

Au/polianilin/p-Si yapının doğrultma özelliğinin incelenmesi

Türk Fizik Derneği 22.Fizik Kongresi, Muğla, Türkiye, 01 Eylül 2004

Polipirol/p-Si/Al diyodunun karakteristik parametrelerinin zamana bağlılığı

Türk Fizik Derneği 22.Fizik Kongresi, Muğla, Türkiye, 01 Eylül 2004

Polipirol/p-Si/Al diyodunun parametrelerinin artan yaşlanma zamanıyla değişimi

Türk Fizik Derneği 22.Fizik Kongresi, Muğla, Türkiye, 01 Eylül 2004

A comparative study of interface state density in anodic and thermal MOS structures

Hellenic Physical Society & Turkish Physical Society, First Hellenic-Turkish International Physics Conference, Türkiye, 01 Eylül 2001

Kitap & Kitap Bölümleri

Nuclear Science and Technology

Estimation of neutron irradiation damages in Ni/n-GaAs Schottky contact layers via FLUKA Monte Carlo simulations, Korkut T., Editör, Transworld Research Network, Kerala, ss.51-58, 2012
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