Yayınlar & Eserler

SCI, SSCI ve AHCI İndekslerine Giren Dergilerde Yayınlanan Makaleler

Tailoring the band gap of ferroelectric YMnO3 through tuning the Os doping level

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.30, ss.3443-3451, 2019 Özet

International Semiconductor Science and Technology Conference, ISSTC-2014

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.28, ss.1, 2014

Electrical characterization of the Al/new fuchsin/n-Si organic-modified device

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, cilt.42, ss.1411-1416, 2010 Özet

Series resistance determination of Au/Polypyrrole/p-Si/Al structure by current-voltage measurements at low temperatures

MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, cilt.29, ss.1486-1490, 2009 Özet

Photovoltaic and electronic properties of quercetin/p-InP solar cells

SOLAR ENERGY MATERIALS AND SOLAR CELLS, cilt.92, ss.1205-1210, 2008 Özet

Electron irradiation effects on the organic-on-inorganic silicon Schottky structure

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, cilt.593, ss.544-549, 2008 Özet

Electrical properties of Sn/p-Si (MS) Schottky barrier diodes to be exposed to (CO)-C-60 gamma-ray source

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, cilt.566, ss.584-589, 2006 Özet

Electrical properties of polypyrrole/p-InP structure

JOURNAL OF POLYMER SCIENCE PART B-POLYMER PHYSICS, cilt.44, ss.1572-1579, 2006 Özet

Effects of Co-60 gamma-ray irradiation on the electrical characteristics of Au/n-GaAs (MS) structures

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, cilt.555, ss.260-265, 2005 Özet

The Cu/n-GaAs Schottky barrier diodes prepared by anodization process

JOURNAL OF ELECTRONIC MATERIALS, cilt.31, ss.1362-1368, 2002 Özet

The effect of anodic oxide treatment on n-GaAs Schottky barrier diodes

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.12, ss.575-579, 2001 Özet

SEMICONDUCTIVE POLYMER-BASED SCHOTTKY DIODE

JOURNAL OF APPLIED PHYSICS, cilt.72, ss.818-819, 1992 Özet

Diğer Dergilerde Yayınlanan Makaleler

Hakemli Kongre / Sempozyum Bildiri Kitaplarında Yer Alan Yayınlar

Current Voltage and Capacitance Voltage Characteristics of Sputtered Ni/n-GaAs Schottky diodes

International Congress on Semiconductor Materials and Devices” (ICSMD-2017), Konya, Türkiye, 17 Ağustos 2017, ss.17
Link

The electrical and dielectric properties of Au/Ti/HfO2/n-GaAs structures in wide temperature range

4th INTERNATIONAL CONFERENCE ON MATERIALS SCIENCE AND NANOTECHNOLOGY FOR NEXT GENERATION (MSNG2017), Sarajevo/Bosnıa, Bosna-Hersek, 28 Haziran 2017, ss.320-323
Link

Some Electrical Characteristics Of GaAs–Based MIS Structures With Atomic Layer Deposited Thin HfO2 Interfacial Layer

NANOSCIENCE&NANOTECHNOLOGY FOR NEXT GENERATION-NanoNG-2016, Antalya, Türkiye, 20 Ekim 2016, ss.83
Link

Characteristic diode parameters of thermally annealed Ni/n-GaAs Schottky contacts over a wide measurement temperature range

International Physics Conference at the Anatolian Peak, IPCAP 2016, Erzurum, Türkiye, 25 Şubat 2016, ss.57
Link

Atomic Layer Deposited Ultra Thin HfO2 Interfacial Layer Grown on GaAs-based MIS Structure in 60-400 K Temperature Range

International Conference On Nanoscience and Nanotechnology For Next Generation-Nanong, Antalya, Türkiye, 29 Ekim 2015

Electrical Parameters of Safranine T/n-Si Contacts

9 th International Physics Conference of The Balcan Physical Union BPU-9, İstanbul, Türkiye, 24 Ağustos 2015

I-V and C-V-f Characteristics of Anniline Green/n-Type Silicon Diode

9 th International Physics Conference of The Balcan Physical Union BPU-9, İstanbul, Türkiye, 24 Ağustos 2015

Current-Capacitance-Voltage Characteristics for the Au/Ti/Al2O3/n-GaAs Structure in 20-300 K range

International Semiconductor Science and Techology Conference-ISSTC, İzmir, Türkiye, 11 Mayıs 2015

Homogenous Barrier Height Work on Ni/EPI-n-Si structure

International Semiconductor Science and Technology Conference-2014, Türkiye, 01 Ocak 2014, ss.60

Effects Of The Radiation On Al/Organic Film/P-Silicon Semiconductor Diode

International Semiconductor Science and Technology Conference-2014, Türkiye, 01 Ocak 2014, ss.115

The Electrical and Photovoltaic Effect of Co/n-GaP Schottky Diode

International Semiconductor Science and Technology Conference-2014, Türkiye, 01 Ocak 2014, ss.72

Metal-Thickness Dependence On The Electrical Properties of Ideal Ti/n-GaAs Schottky Contacts

International Semiconductor Science and Technology Conference-2014, Türkiye, 01 Ocak 2014, ss.123

Capacitance–Voltage Characteristics Of Ni/Au/n-GaN Contacts

International Semiconductor Science and Technology Conference-2014, Türkiye, 01 Ocak 2014, ss.113

The comparison of electrical properties of Au/graphene/p-Si and graphene/p-Si

BSW2013 Fourth Scıence Workshop: Studies on Structure and Dynamıcs from Nucleus to Clusters, Yozgat,, Yozgat, Türkiye, 01 Mayıs 2013, ss.12

Investigation of photvoltaic property for sputtered Al/p-Si/Al structure

BSW2013 Fourth Scıence Workshop: Studies on Structure and Dynamıcs from Nucleus to Clusters, Yozgat,, Yozgat, Türkiye, 01 Mayıs 2013, ss.11-12

Investigation of electrical properties CrTi/n-GaN nano structure

BSW2013 Fourth Scıence Workshop: Studies on Structure and Dynamıcs from Nucleus to Clusters, Yozgat,, Yozgat, Türkiye, 01 Mayıs 2013, ss.13

A Molecular Dynamic Approachtothe Aggregation of Amyloid Aβ (17-21) Peptides

10. Kimyasal Fizik Kongresi (CPC-X), Ankara, Türkiye, 01 Ekim 2012, ss.90

Molecular Dynamics Simulations of Aβ(16-22) Peptides Aggregation

8. Nanoscience&Nanotechnology Congress, Ankara, Türkiye, 01 Haziran 2012, ss.734-207

Characterization Of Au/N-Inp Photovoltaic Structure With Organic Thin Film

4th Hybrid and Organic Photovoltaics Conference, İsveç, 01 Mayıs 2012

Some Considerable Effects on Pt/n-InP Schottky Diode Current-Voltage Characteristics due to Electron Irradiation

on advances in Applied Physics and Material Science (201) American Institute of Physics, Amerika Birleşik Devletleri, 01 Aralık 2011, cilt.1400, no.1, ss.497-501

Analysis of I-V Characteristics of Au/n-type GaAs Schottky diodes

Türk Fizik Derneği 23. Fizik Kongresi, Muğla, Türkiye, 01 Eylül 2005, ss.628

Au/polianilin/p-Si yapının doğrultma özelliğinin incelenmesi

Türk Fizik Derneği 22.Fizik Kongresi, Muğla, Türkiye, 01 Eylül 2004

Polipirol/p-Si/Al diyodunun karakteristik parametrelerinin zamana bağlılığı

Türk Fizik Derneği 22.Fizik Kongresi, Muğla, Türkiye, 01 Eylül 2004

Polipirol/p-Si/Al diyodunun parametrelerinin artan yaşlanma zamanıyla değişimi

Türk Fizik Derneği 22.Fizik Kongresi, Muğla, Türkiye, 01 Eylül 2004

A comparative study of interface state density in anodic and thermal MOS structures

Hellenic Physical Society & Turkish Physical Society, First Hellenic-Turkish International Physics Conference, Türkiye, 01 Eylül 2001

Kitap & Kitap Bölümleri

Nuclear Science and Technology

Estimation of neutron irradiation damages in Ni/n-GaAs Schottky contact layers via FLUKA Monte Carlo simulations, Korkut T., Editör, Transworld Research Network, Kerala, ss.51-58, 2012
Link